Table of Contents
CVD (Chemical Vapor Deposition) offers superior step coverage compared to PVD (Physical Vapor Deposition) due to differences in their deposition mechanisms and physical properties.
CVD Deposition Mechanism
CVD is a chemical reaction-based deposition process:
- Reactive gases diffuse to the substrate surface, where a chemical reaction forms a solid film.
- Since the precursor gases diffuse as molecules or atoms, they exhibit fluidity and permeability, effectively reaching all areas of the substrate, including steps and trenches.
- The gas diffusion path is isotropic, enabling uniform coverage of complex 3D structures.
PVD Deposition Mechanism
PVD is a physical process-based deposition method:
- Material is ejected as high-energy particles via evaporation (evaporation deposition) or sputtering (sputter deposition), traveling in straight-line trajectories to the substrate.
- Since deposition occurs anisotropically, film formation is direction-dependent.
- In shadowed areas such as step corners and trench bottoms, straight-line particle motion struggles to reach, causing poor step coverage (known as the shadowing effect).
Step Coverage Comparison
| Feature | Chemical Vapor Deposition (CVD) | Physical Vapor Deposition (PVD) |
|---|---|---|
| Particle Motion | Molecular gas diffusion, isotropic | High-energy straight-line motion, anisotropic |
| Step Coverage | Uniform deposition on steps and inside trenches | Deposition challenges in shadowed areas |
| Surface Geometry Adaptation | Excellent | Moderate, requires process adjustments (e.g., substrate rotation) |
Why Is CVD Better for Complex Structures?
- High gas molecule mobility: CVD precursor gases can navigate around steps and penetrate narrow areas, ensuring deposition inside trenches.
- Chemically driven film formation: Unlike PVD, which relies on directional particle motion, CVD film growth is governed by surface chemical reactions, eliminating shadowing effects.
- Self-regulating deposition: Deposition rate depends on local surface temperature and reactivity, naturally filling step features and trench bottoms.
CVD Furnace System Images
How to Improve PVD Step Coverage?
Although PVD inherently faces step coverage limitations, optimization techniques can enhance its performance:
- Substrate Rotation or Tilting: Continuously adjusting the substrate angle during deposition improves uniformity.
- Bias-Enhanced Deposition: Applying a negative bias to the substrate attracts particles to hard-to-reach areas.
- Multi-Angle Sputtering: Adjusting the target angle ensures deposition from multiple directions.
CVD achieves superior step coverage due to its gas diffusion-based and chemical reaction-driven deposition, while PVD’s step coverage is limited by its physical motion characteristics. However, PVD performance can be improved with optimized process design.
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